搜狗做题网帮翻译一下这段微电子学专业英语,谢谢.好的话加分.
来源：学生作业帮 编辑：搜狗做题网作业帮 分类：英语作业 时间：2024/04/30 09:52:32
帮翻译一下这段微电子学专业英语,谢谢.好的话加分.
Because it depends on some process characteristics,it is difficult to predict accurately the threshold votage of a MOSFET.In practice,the threshold voltage is measured for a sample device produced in a particular fabrication process.
The threshold voltage can be measured by comparing the experimental current-voltage characteristics with those predicted by theory.We begin above threshold but below saturation,the drain current has the form(公式略）where,from Equation(6.27)(公式略)Equation(7.1)is a model including the effect of the transverse field and longitudinal field(in velocity saturation).For Vds small enough that the saturation velocity can be neglected and Equation(7.1)can be approximated(公式略)
Because it depends on some process characteristics,it is difficult to predict accurately the threshold votage of a MOSFET.In practice,the threshold voltage is measured for a sample device produced in a particular fabrication process.
The threshold voltage can be measured by comparing the experimental current-voltage characteristics with those predicted by theory.We begin above threshold but below saturation,the drain current has the form(公式略）where,from Equation(6.27)(公式略)Equation(7.1)is a model including the effect of the transverse field and longitudinal field(in velocity saturation).For Vds small enough that the saturation velocity can be neglected and Equation(7.1)can be approximated(公式略)
Because it depends on some process characteristics,it is difficult to predict accurately the threshold votage of a MOSFET.\x09
因为它取决于一些工艺特点,很难准确预测阈值电压的场效应晶体管.\x09
In practice,the threshold voltage is measured for a sample device produced in a particular fabrication process.\x09
在实际中,阈值电压的测量装置产生一个样本为在一个特定的制造过程.\x09
The threshold voltage can be measured by comparing the experimental current-voltage characteristics with those predicted by theory.\x09
门槛电压测量可以通过对比实验伏安特性与理论所预测的.\x09
We begin above threshold but below saturation,the drain current has the form(公式略）where,from Equation(6.27)(公式略)Equation(7.1)is a model including the effect of the transverse field and longitudinal field(in velocity saturation).\x09
我们开始上面阈值,但低于饱和度、漏极电流具有形式(公式略)到哪里,从方程(6.27)(公式略)方程(7.1)是一个模型,其中包括效果的横向场和纵向电场(速度饱和).\x09
For Vds small enough that the saturation velocity can be neglected and Equation(7.1)can be approximated(公式略)\x09
Vds的小到可以忽略饱和速度方程(7.1),可以将其近似(公式略)
因为它取决于一些工艺特点,很难准确预测阈值电压的场效应晶体管.\x09
In practice,the threshold voltage is measured for a sample device produced in a particular fabrication process.\x09
在实际中,阈值电压的测量装置产生一个样本为在一个特定的制造过程.\x09
The threshold voltage can be measured by comparing the experimental current-voltage characteristics with those predicted by theory.\x09
门槛电压测量可以通过对比实验伏安特性与理论所预测的.\x09
We begin above threshold but below saturation,the drain current has the form(公式略）where,from Equation(6.27)(公式略)Equation(7.1)is a model including the effect of the transverse field and longitudinal field(in velocity saturation).\x09
我们开始上面阈值,但低于饱和度、漏极电流具有形式(公式略)到哪里,从方程(6.27)(公式略)方程(7.1)是一个模型,其中包括效果的横向场和纵向电场(速度饱和).\x09
For Vds small enough that the saturation velocity can be neglected and Equation(7.1)can be approximated(公式略)\x09
Vds的小到可以忽略饱和速度方程(7.1),可以将其近似(公式略)
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